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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP= 1ms Tc= 80C Tc= 25C tP= 1ms, Tc= 80C VCES IC,nom. IC ICRM 600 50 75 100 V A A A Tc= 25C, Transistor Ptot 280 W VGES +/- 20V V IF 50 A IFRM 100 A VR= 0V, tp= 10ms, Tvj= 125C I2t 450 A2s RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC= 50A, VGE= 15V, Tvj= 25C IC= 50A, VGE= 15V, Tvj= 125C IC= 1,0mA, VCE= VGE, Tvj= 25C VCE sat min. VGE(th) 4,5 typ. 1,95 2,20 5,5 max. 2,45 6,5 V V V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cies - 2,2 - nF f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25C VCE= 600V, VGE= 0V, Tvj= 125C VCE= 0V, VGE= 20V, Tvj= 25C Cres - 0,2 1 1 - 500 400 nF A mA nA ICES IGES - prepared by: Andreas Vetter approved by: Michael Hornkamp date of publication: 2000-04-26 revision: 1 1 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Charakteristische Werte / Characteristic values Transistor / Transistor IC= 50A, VCC= 300V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE= 15V, RG= 2,7, Tvj= 25C VGE= 15V, RG= 2,7, Tvj= 125C IC= 50A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 2,7, Tvj= 25C VGE= 15V, RG= 2,7, Tvj= 125C IC= 50A, VCC= 300V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) VGE= 15V, RG= 2,7, Tvj= 25C VGE= 15V, RG= 2,7, Tvj= 125C IC= 50A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= 15V, RG= 2,7, Tvj= 25C VGE= 15V, RG= 2,7, Tvj= 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Tc= 25C IC= 50A, VCC= 300V, VGE= 15V RG= 2,7, Tvj= 125C, L = 35nH IC= 50A, VCC= 300V, VGE= 15V RG= 2,7, Tvj= 125C, L = 35nH tP 10sec, VGE 15V Tvj125C, VCC=360V, VCEmax= VCES -LCE *di/dt Eon tf 12 21 0,5 ns ns mJ td,off 120 130 ns ns tr 9 10 ns ns td,on 40 42 ns ns min. typ. max. Eoff - 1,0 - mJ ISC - 225 - A LCE - 40 - nH RCC'+EE' - 1,2 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF= 50A, VGE= 0V, Tvj= 25C IF= 50A, VGE= 0V, Tvj= 125C IF= 50A, -diF/dt= 2900A/sec Ruckstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 50A, -diF/dt= 2900A/sec Sperrverzogerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 50A, -diF/dt= 2900A/sec Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C Erec 1,5 mJ mJ Qr 3,4 5,6 C C IRM 88 92 A A VF min. - typ. 1,25 1,20 max. 1,6 V V 2 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode / diode, DC pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthJC RthCK - typ. 0,03 max. 0,44 0,80 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage insulation Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment fur mech. Befestigung mounting torque Schraube M6 screw M6 M1 -15 Al2O3 15 mm 8,5 mm 275 5 +15 Nm % Gewicht weight G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 100 90 80 70 Tvj = 25C Tvj = 125C IC [A] 60 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 90 80 70 VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V I C= f (VCE) Tvj= 125C IC [A] 60 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 100 90 Tvj = 25C 80 70 Tvj = 125C IC [A] 60 50 40 30 20 10 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 90 80 70 Tvj = 25C Tvj = 125C I F= f (VF) IF [A] 60 50 40 30 20 10 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 2,7,=RG,off = 2,7 , VCC= 300V, Tvj= 125C ,= , 2,5 Eon 2,0 Eoff Erec E [mJ] 1,5 1,0 0,5 0,0 0 20 40 60 80 100 IC [A] Schaltverluste (typisch) Switching losses (typical) 2,5 E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 50A , VCC= 300V , Tvj = 125C 2,0 E [mJ] 1,5 1,0 0,5 Eon Eoff Erec 0,0 0 5 10 15 20 RG [] 6 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 1 0,1 ZthJC [K / W] Zth:IGBT 0,01 Zth:Diode 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec] 1 18,6 0,0018 281,9 0,0487 2 230,6 0,0240 270,4 0,0169 3 155,1 0,0651 169,8 0,1069 4 35,7 0,6626 77,9 0,9115 : IGBT : IGBT : Diode : Diode Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 120 VGE= +15V, R G,off = 2,7, Tvj= 125C , 100 80 60 IC [A] 40 IC,Modul IC,Chip 20 0 0 100 200 300 400 500 600 700 VCE [V] 7 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Gehausemae / Schaltbild Package outline / Circuit diagram 13 10 M5 2,8 x 0,5 6 1 17 2 6 3 6 7 23 80 94 23 17 5 4 6 7 1 3 5 2 4 8 (8) BSM 50 GB 60 DLC 2000-02-08 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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